Nanoscale resistive switching in amorphous perovskite oxide ( a- SrTiO3) memristors

H Nili; S Walia; S Balendhran; DB Strukov; M Bhaskaran; S Sriram

Journal article

Nanoscale resistive switching in amorphous perovskite oxide ( a- SrTiO3) memristors

H Nili, S Walia, S Balendhran, DB Strukov, M Bhaskaran, S Sriram

Advanced Functional Materials | Published : 2014

DOI: 10.1002/adfm.201401278

Abstract

Memristive devices are the precursors to high density nanoscale memories and the building blocks for neuromorphic computing. In this work, a unique room temperature synthesized perovskite oxide (amorphous SrTiO3 : a- STO) thin film platform with engineered oxygen deficiencies is shown to realize high performance and scalable metal-oxide-metal (MIM) memristive arrays demonstrating excellent uniformity of the key resistive switching parameters. a- STO memristors exhibit nonvolatile bipolar resistive switching with significantly high (103 -104) switching ratios, good endurance (>106 I-V sweep cycles), and retention with less than 1% change in resistance over repeated 10 5 s long READ cycles. Na..

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University of Melbourne Researchers

Shiva Balendhran Author

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ADVANCED IN-SITU ELECTRON MICROSCOPE FACILITY FOR RESEARCH IN ALLOYS, NANOMATERIALS, FUNCTIONAL MATERIALS, MAGNETIC MATERIALS AND MINERALS

This advanced in situ electron microscope facility will provide Australia with a new and critical capability to understand and design techno..

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Funding Acknowledgements

The authors acknowledge the Australian Research Council for funding in the form of project (DP130100062), fellowship (DP1092717 and DP110100262), and infrastructure (LE0882246, LE0989615, and LE110100223) support.